
Si3216
24 Rev. 1.0
Not Recommended
f
o
r N
e
w
D
e
si
g
n
s
Figure 14. Si321xM MOSFET/Transformer DC-DC Converter Circuit
Table 15. Si321x BJT/Inductor DC-DC Converter Component Values
Component(s) Value Supplier
C9 10 µF, 100 V, Electrolytic, ±20% Panasonic
C10* 0.1 µF, X7R, ±20% Murata, Johanson, Novacap, Venkel
C14* 0.1 µF, X7R, ±20% Murata, Johanson, Novacap, Venkel
C25* 10 F, Electrolytic, ±20% Panasonic
R16 200 , 1/10 W, ±5%
R17 1/10 W, ±5% (See “AN45: Design Guide for The Si3210 DC-
DC Converter” or Table 20 for value selection)
R18 1/4 W, ±5% (See AN45 or Table 20 for value selection)
R19,R20 1/10 W, ±1% (See AN45 or Table 20 for value selection)
F1 Fuse Belfuse SSQ Series
D1 Ultra Fast Recovery 200 V, 1 A Rectifier General Semi ES1D; Central Semi
CMR1U-02
L1 1A, Shielded Inductor (See AN45 or
Table 20 for value selection)
API Delevan SPD127 series, Sumida
CDRH127 series, Datatronics DR340-1
series, Coilcraft DS5022
Q7 120 V, High Current Switching PNP Zetex FZT953, FZT955, ZTX953,
ZTX955; Sanyo 2SA1552
Q8 60 V, General Purpose Switching NPN ON Semi MMBT2222ALT1; Central
Semi CMPT2222A; Zetex FMMT2222
*Note: Voltage rating of this device must be greater than V
DC
.
D1
ES1D
C9
10 µF
C25
2
10 µF
R19
1
R20
1
R18
1
R22
22
R17
200 k
F1
SDCH
SDCL
DCFF
DCDRV
GND
VBAT
C14
2
0.1 µF
VDC
C27
470 pF
M1
IRLL014N
T1
1
NC
Note 1
Note 1
1
2
3
4
10
Si321xM
6
Notes:
1. Values and configurations for these components can be derived
from Table 19 or from “AN45: Design Guide for the Si3210/15/16
DC-DC Converter”.
2. Voltage rating for C14 and C25 must be greater than VDC.
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